PNY Elite Micro SD SDXC Memory Card Class10 100MB/s UHS-1 U1 with SD Adapter - 256GB

Specifications Product Type: RAM memory Capacity: 16 GB Memory Type: DDR4 SDRAM - DIMM 288-pin Upgrade Type: Generic Speed: 2666 MHz (PC4-21300) Latency Timings: CL19 Features: Dual rank, unbuffered Voltage: 1.2 V Lead Plating: Gold Chips Organization: X8 Data Integrity Check: Non-ECC Form Factor: DIMM 288-pin Lead Plating: Gold Module Configuration: 2048 x 64 Speed: 2666 MHz (PC4-21300) Technology: DDR4 SDRAM Box Contents 1 x Kingston - DDR4 - 16 GB - DIMM 288-pin - 2666 MHz / PC4-21300 - CL19 - 1.2 V - unbuffered - non-ECC

Capture all of life’s precious moments securely with Samsung’s new range of high-performing and stylish memory cardsExtreme read & write speeds Samsung’s ultra-fast PRO Plus Card sets the standard for extreme sports & action photography. This UHS-I Speed Class 3 (U3) and Class 10 compatibility card is perfect for 4K UHD video recording & playback. And with blazing-fast read & write speeds of up to 100MB/s & 90 MB/s respectively, you can transfer files and shoot photos with minimal lag.4K Ultra HD video Capture the moments that matter. With the Samsung PRO Plus microSD Card, you can shoot rich and detailed 4K UHD videos from your smartphone, tablet, or action camera, confident that each memory will be safe. Play your videos back on your 4K UHD TV or monitor and relive the experience as vividly as the day it happened.Waterproof Samsung Memory Cards can survive up to 72 hours in seawaterTemperature-proof These memory cards can endure temperatures from -25° to 85° CelsiusX-Ray-proof Protect all your data from damage caused by airport X-ray machinesMagnet-proof Samsung Memory Cards can even resist magnetic fields of up to 15000 gauss—the equivalent of a high-field MRI scanner

Kurzinfo: Origin Storage - DDR4 - 16 GB - SO DIMM 260-PIN - 2133 MHz / PC4-17000 - 1.2 V - ungepuffert - ECC Gruppe RAM Hersteller Origin Storage Hersteller Art. Nr. OM16G42133SO2RX8E12 Modell Storage EAN/UPC 5056006109167 Produktbeschreibung: Origin Storage - DDR4 - 16 GB - SO DIMM 260-PIN Produkttyp RAM-Speicher Kapazität 16 GB Speichertyp DDR4 SDRAM - SO DIMM 260-PIN Erweiterungstyp Generisch Datenintegritätsprüfung ECC Geschwindigkeit 2133 MHz (PC4-17000) Leistungsmerkmale Dual Rank , ungepuffert Spannung 1.2 V Ausführliche Details Allgemein Kapazität 16 GB Erweiterungstyp Generisch Speicher Typ DRAM Technologie DDR4 SDRAM Formfaktor SO DIMM 260-PIN Geschwindigkeit 2133 MHz (PC4-17000) Datenintegritätsprüfung ECC Besonderheiten Dual Rank , ungepuffert Chip-Organisation X8 Spannung 1.2 V

Memorysolution 256MB Kyocera KM-C2520, KM-C3225, KM-C3232

... The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. This 260-pin DIMM uses gold contact fingersFeaturesPower Supply: VDD=1.2V TypicalVDDQ = 1.2V TypicalVPP - 2.5V TypicalVDDSPD=2.2V to 3.6VNominal and dynamic on-die termination (ODT) for data, strobe, and mask signalsLow-power auto self refresh (LPASR)Data bus inversion (DBI) for data busOn-die VREFDQ generation and calibrationDual-rankOn-board I2 serial presence-detect (SPD) EEPROM16 internal banks; 4 groups of 4 banks eachFixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)Selectable BC4 or BL8 on-the-fly (OTF)Fly-by topologyTerminated control command and address busPCB: Height 1.18 inch (30.00mm)RoHS Compliant and Halogen-FreeExtra InfoMemory Size: 16384MBModule Size: 16384MBMemory Type: DDR4Memory Package: SO-DIMMPin Configuration: 260 pinsMain Colour: Green

... FBGA components per module. Total kit capacity is 24GB. The SPDs are programmed to JEDEC standard latency DDR3-1333 timing of 9-9-9 at 1.5V. Each 240-pin DIMM uses gold contact fingers.ValueRAM, Kingston's industry standard memory, delivers award-winning performance and legendary Kingston reliability. When you know what you want, you want ValueRAM.FeaturesJEDEC standard 1.5V (1.425V ~ 1.575V) Power SupplyVDDQ = 1.5V (1.425V ~ 1.575V)667MHz fCK for 1333Mb/sec/pin8 independent internal bankProgrammable CAS Latency: 9, 8, 7, 6Programmable Additive Latency: 0, CL - 2, or CL - 1 clockProgrammable CAS Write Latency(CWL) = 7 (DDR3-1333)8-bit pre-fetchBurst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]Bi-directional Differential Data StrobeInternal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)On Die Termination using ODT pinAverage Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°Asynchronous ResetPCB: Height 1.18 inch (30mm), double sided componentExtra InfoMemory Size: 24576MBModule Size: 8192MBMemory Type: DDR3Memory Package: DIMMPin Configuration: 240 pins