Corsair Dominator Platinum - DDR4 - 16 GB : 2 x 8 GB - DIMM 288-PIN - 3200 MHz / PC4-25600 - CL16 - 1.2 V - ungepuffert - nicht-ECC (CMD16GX4M2B3200C16)

Kurzinfo: Transcend - DDR3L - 4 GB - SO-DIMM, 204-polig - 1600 MHz / PC3L-12800 - CL11 - 1.35 / 1.5 V - ungepuffert - nicht-ECC Gruppe RAM Hersteller Transcend Hersteller Art. Nr. TS512MSK64W6N Modell EAN/UPC 0760557826118 Produktbeschreibung: Transcend - DDR3L - 4 GB - SO-DIMM, 204-polig Produkttyp RAM-Speicher Kapazität 4 GB Speichertyp DDR3L SDRAM - SO-DIMM, 204-polig Erweiterungstyp Systemspezifisch Datenintegritätsprüfung Nicht-ECC Geschwindigkeit 1600 MHz (PC3L-12800) Latenzzeiten CL11 (11-11-11) Leistungsmerkmale Single Rank, On-Die Termination (ODT), Serial Presence Detect (SPD), Niederspannung , ungepuffert Spannung 1.35 / 1.5 V Ausführliche Details Allgemein Kapazität 4 GB Erweiterungstyp Systemspezifisch Speicher Typ DRAM Technologie DDR3L SDRAM Formfaktor SO-DIMM, 204-polig Modulhöhe (Zoll) 1.18 Geschwindigkeit 1600 MHz (PC3L-12800) Latenzzeiten CL11 (11-11-11) Datenintegritätsprüfung Nicht-ECC Besonderheiten Single Rank, On-Die Termination (ODT), Serial Presence Detect (SPD),

... FBGA components per module. Each module kit supports Intel Extreme Memory Profiles (Intel XMP) 2.0. Total kit capacity is 16GB. Each module has been tested to run at DDR4-2400 at a low latency timing of 12-14-14 at 1.35V. The SPDs are programmed to JEDEC standard latency DDR4-2400 timing of 17-17-17 at 1.2V. Each 288-pin DIMM uses gold contact fingers.FeaturesPower Supply: VDD=1.2V TypicalVDDQ = 1.2V TypicalVPP - 2.5V TypicalVDDSPD=2.2V to 3.6VOn-Die termination (ODT)16 internal banks; 4 groups of 4 banks eachBi-directional Differential Data Strobe8-bit pre-fetchBurst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)Height 1.661 inches (42.20mm)Extra InfoMemory Size: 16384MBModule Size: 8192MBMemory Type: DDR4Memory Package: DIMMDesignation: PC4-19200Pin Configuration: 288 pinsMain Colour: Black

Speed in styleA modern take on a classic. The next generation BAR Plus elevates the flash drive to an everyday essential, offering impressive speed and striking design. The metal unibody is pure minimalism in a drive that cleverly blends style, speed and reliability.Move files in a flashGet your time back. Fast and convenient read speeds up to 300 MB/s¹ with the latest USB 3.1 standard give you more time to work, play, watch, and create. Send a 3GB 4K UHD video file from your Bar Plus to your PC in just 10 seconds².Quick. And ready.Rugged refinementAs strong as it is stylish. The sturdy metal body keeps your data safe and intact, and the integrated keyring prevents accidental misplacement or loss. The BAR Plus is the ideal combination of stunning design and worry-free durability.Tough & TrustedFiles stay secure, anywhere you go. Samsung’s leadership in flash memory makes the BAR Plus a trustworthy drive to store your valuable data. It works through it all with a waterproof¹, shock-proof², temperature-proof³, magnet-proof⁴, and X-ray-proof⁵ body, all backed by a 5-year limited warranty⁶Capacity - 128GB (1GB=1,000,000,000 bytes) * Actual usable capacity may be less (due to formatting, operating system, applications or otherwise) Interface - USB 3.1 Gen 1 (backward compatible with USB 3.0/2.0) Connector - Standard A Dimension (WxHxD) - 15.60 X 40.01 X 11.70mm Weight - Approx. 10g Performance Speed - Up to 200MB/s read speed for USB 3.1, write speed is lower than read speed. *Actual speed may vary by host device and actual usage conditions. Temperature - Withstands -25°C to 85°C (-13°F to 185°F) operating,-40°C to 85°C (-40°F to 185°F) non-operating Magnetic - 15,000 G (Gauss) X-ray - 80KV, 50uA, 4W, 500 sec Radiation time Water - 1m depth 3% NaCl salt water, 72hrs Shock - Acceleration :1,500 g (gravity), Duration time : 0.5ms, Direction : x,y,z 3 times Certification - EMC, KC, FCC, CE, VCCI, RCM Warranty - 5 years limited ¹Up to 300 MB/s for 256/128GB models, up to 200 MB/s for 64/32GB models. ²Minimum of 10 secs for 256/128GB models, minimum of 14 secs for 64/32GB models (tested with combination of Asus Z370-G, Intel [email protected], 8GB DDR4 and Windows 10 Enterprise 64bit)

Kurzinfo: MicroMemory - DDR3 - 2 GB - DIMM 240-PIN - 1333 MHz / PC3-10600 - registriert - ECC - für Dell PowerEdge C1100, C2100, C6100, C6105, M610, M710, R715, T110, Precision T3500, T5500 Gruppe RAM Hersteller MicroMemory Hersteller Art. Nr. MMD0084/2048 Modell EAN/UPC 5711045086854 Produktbeschreibung: MicroMemory - DDR3 - 2 GB - DIMM 240-PIN - registriert Produkttyp RAM-Speicher Kapazität 2 GB Speichertyp DDR3 SDRAM - DIMM 240-PIN Erweiterungstyp Systemspezifisch Datenintegritätsprüfung ECC Geschwindigkeit 1333 MHz (PC3-10600) Leistungsmerkmale Registriert Entwickelt für Dell PowerEdge C1100, C2100, C6100, C6105, M610, M610x, M710, M710HD, R210, R310, R410, R510, R610, R710, R715, T110, T110 II, T310, T410, T610, T710, Precision T3500, T5500 Ausführliche Details Allgemein Kapazität 2 GB Erweiterungstyp Systemspezifisch Speicher Typ DRAM Technologie DDR3 SDRAM Formfaktor DIMM 240-PIN Geschwindigkeit 1333 MHz (PC3-10600) Datenintegritätsprüfung ECC Besonderheiten Registriert Erweiterung/Konnektivität

Kurzinfo: Intel Xeon E5-2650V3 - 2.3 GHz - 10-Core - 20 Threads - 25 MB Cache-Speicher - LGA2011-v3 Socket - für ThinkStation P700, P900 Gruppe Prozessor-Upgrades Hersteller Lenovo Hersteller Art. Nr. 4XG0H12084 Modell Intel Xeon E5-2650V3 EAN/UPC Produktbeschreibung: Intel Xeon E5-2650V3 / 2.3 GHz Prozessor Produkttyp Prozessor Prozessortyp Intel Xeon E5-2650V3 Anz. der Kerne 10-Core / 20 Threads Cache-Speicher 25 MB Kompatibler Prozessoranschluss LGA2011-v3 Socket Prozessoranz. 1 Taktfrequenz 2.3 GHz Max. Turbo-Geschwindigkeit 3 GHz Funktionen Intel QuickPath Technology Entwickelt für ThinkStation P700, P900 Ausführliche Details Allgemein Produkttyp Prozessor Prozessor Typ / Formfaktor Intel Xeon E5-2650V3 Anz. der Kerne 10-Core Anz. der Threads 20 Threads Cache-Speicher 25 MB Cache-Speicher-Details L3 - 25 MB L2 - 2.5 MB Prozessoranz. 1 Taktfrequenz 2.3 GHz Max. Turbo-Geschwindigkeit 3 GHz Kompatibler Prozessoranschluss LGA2011-v3 Socket Thermal Design Power (TDP) 105 W Architektur-Merkmale

Kurzinfo: Intel Xeon E5-4669V3 - 2.1 GHz - 18-Core - 45 MB Cache-Speicher - LGA2011-v3 Socket - für ProLiant DL560 Gen9, DL560 Gen9 Base, DL560 Gen9 Entry, DL560 Gen9 Performance Gruppe Prozessor-Upgrades Hersteller Hewlett-Packard Hersteller Art. Nr. 742708-B21 EAN/UPC Produktbeschreibung: Intel Xeon E5-4669V3 / 2.1 GHz Prozessor Produkttyp Prozessor Prozessortyp Intel Xeon E5-4669V3 Anz. der Kerne 18-Core Cache-Speicher 45 MB Kompatibler Prozessoranschluss LGA2011-v3 Socket Prozessoranz. 1 Taktfrequenz 2.1 GHz Herstellungsprozess 22 nm Funktionen Intel QuickPath Technology Entwickelt für ProLiant DL560 Gen9, DL560 Gen9 Base, DL560 Gen9 Entry, DL560 Gen9 Performance Ausführliche Details Allgemein Produkttyp Prozessor Prozessor Typ / Formfaktor Intel Xeon E5-4669V3 Anz. der Kerne 18-Core Cache-Speicher 45 MB Cache-Speicher-Details L3 - 45 MB Prozessoranz. 1 Taktfrequenz 2.1 GHz Kompatibler Prozessoranschluss LGA2011-v3 Socket Herstellungsprozess 22 nm Thermal Design Power (TDP) 135 W Architektur-Merkmale